
silicongear®DG100N19PB
100V N-Channel Power MOSFET

Description
- These devices used double-gate structure of MOSFET to provide excellent electrical parameter. There is high speed switching capacity, low RDSON resistance, low gate charge and stable characteristics for these devices. Moreover, it is a helpful choose for raise efficiency or reduce consumption in circuit. These features combine to be an advantage design for use in wide variety of application including converter and inverter desig
Features
- Fast switch capacity
- Low RDS(ON) resistance
- Low input capacitance
- With voltage logic level driving characteristics
- Pb-free lead plating; RoHS compliant
Application
- AC to DC adaptor
- DC to DC Converter
- Power Switch Mode Supply
- Synchronous Rectifier for Power Delivery
- Network equipment and display power supply unit
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