Description

• The DG150N06Q used double-gate structure of MOSFET to provide excellent electrical parameter. There is high speed switching capability, low RDSON resistance, stabilizing qualitied and characteristics for these devices. Moreover, it is had extreme high cell density in design. These features combine to be an advantage design for use in wide variety of application including small signal control and load switch application.

Features

• Fast switch capacity
• Low RDS(ON) resistance
• With voltage logic level driving characteristics
• Pb-free lead plating; RoHS compliant

Application

• AC-DC adaptor
• DC-DC converter
• Load Switch
• Electric tool application
• Synchronous Rectifier for Power Delivery
• LED Applications

 


<Contact Us> <Datasheet> <Back>