
silicongear®SG30N10E
30V N-Channel Power MOSFET

Description
- The SG30N03D uses advanced Trench technology and designs to
provide excellent RDS(ON) with low gate charge. This device is suitable for
use in PWM, load switching and general purpose applications.
Features
- Low On-Resistance RDS (on)
- Low Input Capacitance
- Low Miller Charge
- Low Input / Output Leakage
- Pb-free lead plating; RoHS compliant
Application
- Motor / Body Load Control
- Automotive Systems
- Load Switch
- DC-DC converters and Off-line UPS
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