Description

• The SG30N10I used advanced trench technology of MOSFET to provide excellent electrical parameter. There is high speed switching capability, low RDSON resistance, stabilizing qualitied and characteristics for these devices. Moreover, it is had extreme high cell density in design. These features combine to be an advantage design for use in wide variety of application including small signal control and load switch application.

Features

• Fast switch capacity
• Low RDS(ON) resistance
• With voltage logic level driving characteristics
• Pb-free lead plating; RoHS compliant

Application

• Signal control
• Small power and load switch
• Networking system or equipment
• DC-DC power system for Monitor/TV
• Consumed electronics

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