Description

• The SG80N07HD uses double-gate structure of MOSFET to provide excellent electrical parameter. There is high speed switching capacity, low RDSON resistance, low gate charge and stable characteristics for these devices. Moreover, it is a helpful choose for raise efficiency or reduce consumption in circuit. These features combine to be an advantage design for use in wide variety of application including converter and inverter design.

Features

• Fast switch capacity
• Low RDS(ON) resistance
• Low input capacitance
• Low Switching Loss
• Ruggedness commutation capability
• Pb-free lead plating; RoHS compliant

Application

• AC-DC adaptor
• DC-DC converter
• Load Switch
• Electric tool application
• Motor/Fan driving application
• Synchronous Rectifier for Power Delivery

 


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