silicongear®SG80N07HD
80V N-Channel Power MOSFET
Description
- The SG80N07HD uses double-gate structure of MOSFET to provide excellent electrical parameter. There is high speed switching capacity, low RDSON resistance, low gate charge and stable characteristics for these devices. Moreover, it is a helpful choose for raise efficiency or reduce consumption in circuit. These features combine to be an advantage design for use in wide variety of application including converter and inverter design.
Features
Application
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