Description

• These devices are N-channel power MOSFET developed using Generation-3 Super Junction structure technology. There is high speed switching capacity, low RDSON resistance, excellent power density, stabilizing qualitied and characteristics for these devices. Moreover, it is a good choose in improved efficiency of circuit and raise power density are required. These features combine to be an advantage design for use in wide variety of application including converter and inverter design.

Features

• Ultra-fast body diode
• Fast reverse recovery time (trr)
• Low RDS (on) resistance
• Low Switching Loss
• High power and current handling capacity
• Excellent single pulse avalanche energy
• Pb-free lead plating; RoHS compliant

Application

• Switch Mode Power Supply
• High power density application
• PV inverter
• Server power system
• EV charging system

 


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