Description

• These devices are N-channel power MOSFET developed using Generation-3 Super Junction structure technology. There is high speed switching capacity, low RDSON resistance, excellent power density, stabilizing qualitied and characteristics for these devices. Moreover, it is a good choose in improved efficiency of circuit and raise power density are required. These features combine to be an advantage design for use in wide variety of application including converter and inverter design.

Features

• Fast Switching
• Low RDS (on) resistance
• Low Switching Loss
•  Integrated ESD protection diode
• ESD(HBM) : Class 2
• 100% Single Pulse Avalanche Energy Test
• Pb-free lead plating; RoHS compliant

Application

• AC to DC converter
• High power density application
• Consumer electronics adaptor or charger
• Network equipment and display power supply unit
• Switch Mode Power Supply

 


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