Description

• These devices are N-channel power MOSFET developed using Super Junction structure technology. There is high speed switching capacity, low RDSON parameter, excellent quality and characteristics for these devices. Moreover, it is a good choose in improved efficiency of circuit and raise power density are required. These features combine to be an advantage design for use in wide variety of application including switch mode power design.

Features

• Fast Switching
• Low RDS (on) resistance
• Low Switching Loss
• Batter EAS Capabilities
• Integrated ESD protection diode (HBM Class-2)
• 100% Single Pulse Avalanche Energy Test
• Pb-free lead plating; RoHS compliant

Application

• AC to DC converter
• Electronic Ballasts and LED lighting power
• Consumer electronics adaptor or charger
• Network equipment and display power supply unit
• Switch Mode Power Supply

 


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